Browse > Article
http://dx.doi.org/10.5229/JKES.2017.20.1.1

Effect of Surface Pretreatment on Film Properties Deposited by Electro-/Electroless Deposition in Cu Interconnection  

Lim, Taeho (Department of chemical engineering, Soongsil University)
Kim, Jae Jeong (Department of chemical and biological engineering, Seoul National University)
Publication Information
Journal of the Korean Electrochemical Society / v.20, no.1, 2017 , pp. 1-6 More about this Journal
Abstract
This study investigated the effect of surface pretreatment, which removes native Cu oxides on Cu seed layer, on subsequent Cu electro-/electroless deposition in Cu interconnection. The native Cu oxides were removed by using citric acid-based solution frequently used in Cu chemical mechanical polishing process and the selective Cu oxide removal was successfully achieved by controlling the solution composition. The characterization of electro-/electrolessly deposited Cu films after the oxide removal was then performed in terms of film resistivity, surface roughness, etc. It was observed that the lowest film resistivity and surface roughness were obtained from the substrate whose native Cu oxides were selectively removed.
Keywords
Cu; Electrodeposition; Electroless; Oxide; Pretreatment;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 S.-K. Kim, M. C. Kang, H.-C. Koo, S. K. Cho, J. J. Kim, and J.-K. Yeo, 'Cu Metallization for Giga Level Devices Using Electrodeposition' J. Korean Electrochem. Soc., 10, 94 (2007).   DOI
2 T. Lim, K. J. Park, M. J. Kim, H.-C. Koo, and J. J. Kim, 'Real-Time Observation of Cu Electroless Deposition Using OCP Measurement Assisted by QCM' J. Electrochem. Soc., 159, D724 (2012).   DOI
3 T. Lim, K. J. Park, M. J. Kim, H.-C. Koo, K. H. Kim, S. Choe, and J. J. Kim, 'Real-Time Observation of Cu Electroless Deposition: Synergetic Suppression Effect of 2,2'-dipyridyl and 3-N,N'-Dimethylaminodithio-carbamoyl-1-propanesulfonic Acid' J. Electrochem. Soc., 161, D135 (2014).   DOI
4 International Technology Roadmap for Semiconductors Reports 2.0 More Moore, 32, 2015 Edition, International Technology Roadmap for Semiconductors (2015).
5 V. R. K. Gorantla, K. A. Assiongbon, S. V. Babu, and D. Roy, 'Citric Acid as a Complexing Agent in CMP of Cu - Investigation of Surface Reactions Using Impedance Spectroscopy' J. Electrochem. Soc., 152, G404 (2005).   DOI
6 A. F. Mayadas and M. Shatzkes, 'Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces' Phys. Rev. B, 1, 1382 (1970).   DOI
7 F. M. Smits, 'Measurement of Sheet Resistivities with the Four-Point Probe' Bell Labs Techn. J., 37, 711 (1958).   DOI
8 J.-C. Chen and W.-T. Tsai, 'Effects of Hydrogen Peroxide and Alumina on Surface Characteristics of Copper Chemical-Mechanical Polishing in Citric Acid Slurries' Mater. Chem. Phys., 87, 387 (2004).   DOI
9 M. J. Kim and J. J. Kim, 'Electrodeposition for the Fabrication of Copper Interconnection in Semiconductor Devices' Korean Chem. Eng. Res., 52, 26 (2014).   DOI
10 "The National Technology Roadmap for Semiconductors",11, 1997 Edition, Semiconductor IndustryAssociation, Washington D.C., USA (1997).