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http://dx.doi.org/10.5229/JKES.2011.14.3.125

The Effects of Pre-Annealing on Electrochemical Preparation for Nanoporous Tungsten Oxide Films  

Kim, Sun-Mi (Department of Chemical Engineering, Inha University)
Kim, Kyung-Min (Department of Chemical Engineering, Inha University)
Choi, Jin-Sub (Department of Chemical Engineering, Inha University)
Publication Information
Journal of the Korean Electrochemical Society / v.14, no.3, 2011 , pp. 125-130 More about this Journal
Abstract
We describe that the surface and thickness of nanoporous $WO_3$ fabricated by both light-induced and light-absent anodization are affected by pre-annealing process from $200^{\circ}C$ to $600^{\circ}C$. As a result, the nanoporous $WO_3$ with a thickness of $1.83{\mu}m$ can be achieved by anodization for 6 hours after pre-annealing at $400^{\circ}C$ without illumination of light. Moreover, the thickness of nanoporous $WO_3$ fabricated by pre-annealing is thicker than that of $WO_3$ prepared by non-annealing process. However, the light illumination during anodization leads to convert the crystalline structure obtained by pre-annealing, which interfere the growth of nanoporous $WO_3$. In this paper, we discuss about the growth mechanism of these different nanoporous $WO_3$ films.
Keywords
Pre-anealing; Light-induced anodizaton; Tungsten oxide;
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