Browse > Article
http://dx.doi.org/10.5229/JKES.2006.9.2.084

Local Anodization on Si surface Using Scanning Probe Microscope; Effects of Tip Voltage, Deflection Setpoint, and Tip Velocity on Line Height  

Kim Chang-Hwan (Department of Chemistry and Interdisciplinary Program of Integrated Biotechnology, Sogang University)
Choi Jeong-Woo (Department of Chemical & Biomolecular Engineering and Interdisciplinary Program of Integrated Biotechnology, Sogang University)
Shin Woon-Sup (Department of Chemistry and Interdisciplinary Program of Integrated Biotechnology, Sogang University)
Publication Information
Journal of the Korean Electrochemical Society / v.9, no.2, 2006 , pp. 84-88 More about this Journal
Abstract
The effects of tip voltage, deflection setpoint, and tip velocity on height of $SiO_2$ line drawn by local anodization on Si wafer using scanning probe microscope were investigated. No local anodization was detected at smaller than -3 V of tip voltage. The line height increased at rate of 0.47 nm/V when the tip voltage is stronger than -3 V at $1{\mu}m/s$ tip velocity. From deflection setpoint, mechanical force between tip and substrate could be calculated and the threshold farce was $12\sim18nN$. The height of anodized $SiO_2$ lines is independent of the magnitude of force above the threshold force. The line height decreased as increasing the tip velocity and limited to 0.7 nm at -5 V tip voltage.
Keywords
Scanning probe microscope; Lithography; Local anodization; Nanofabrication;
Citations & Related Records
연도 인용수 순위
  • Reference
1 A. E. Gordon, R. T. Fayfield, D. D. Litfin, and T. K. Higman, 'Mechanisms of surface anodization produced by scanning probe microscopes,' J. Vac. Sci. Technol. B, 13(6),2805, (1995)   DOI   ScienceOn
2 P. Avouris, T. Hertel, and Richard Martel, 'Atomic force microscope tip-induced local oxidation of silicon: kinetics, mechanism, and nanofabrication,' Appl. Phys. Lett., 71(2), 285 (1997)   DOI   ScienceOn
3 T. Teuschler, K. Mahr, S. Miyazaki, M. Hundhausen, and L. Ley, 'Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kinetics,' Appl. Phys. Lett., 67(2), 3144 (1995)   DOI   ScienceOn
4 D. Stievenard, P. A. Fontaine, and E. Dubois, 'Nanooxidation using a scanning probe microscope: An analytical model based on field induced oxidation,' Appl. Phys. Lett., 70(24), 3272 (1997)
5 J. A. Dagata, T. Inoue, J. Itoh, and Yokoyama, 'Understanding scanned probe oxidation of silicon,' Appl. Phys. Lett., 73(2), 271 (1998)
6 A. A. Tseng, A. Notargiacomo, and T. P. Chen, 'Nanofabrication by scanning probe microscope lithography: A review,' J. Vac. Sci. Technol. B, 23(3), 877 (2005)   DOI   ScienceOn
7 J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennet, 'Modification of hydrogen-passivated silicon by a scanning tunnuling microscope operating in air,' Appl. Phys. Lett., 56(20), 2001 (1990)   DOI
8 R. Held, T. Heinzel, P. Studerus, K. Ensslin, and M. Holland, 'Semiconductor quantum point contact fabricated by lithography with an atomic force microscope,' Appl. Phys. Lett., 71(18), 2689 (1997)
9 S. C. Minne, H. T. Soh, Ph. Flueckiger, and C. F. Quatc, 'Fabrication of 0.1 ${\mu}m$ metal oxide semiconductor field-effect transistors with the atomic force microscope,' Appl. Phys. Lett., 66(6), 703 (1995)   DOI   ScienceOn
10 P. M. Campbell, E. S. Snow, and P. J. McMarr, 'Fabrication of nanometer-scale side-gated silicon field effect transistors with an atomic force microscope,' Appl. Phys. Lett., 66(11), 1388 (1995)   DOI   ScienceOn
11 H. Sugimura, T. Uchida, N. Kitamura, and H. Masuhara, 'Tip-induced anodization of titanium surfaces by scanning tunneling microscopy: A humidity effect on nanolithography,'' Appl. Phys. Lett., 63(9), 1288 (1993)   DOI   ScienceOn
12 H. Sugimura, T. Uchida, N. Kitamura, and H. Masuhara, 'Scanning Tunneling Microscope Tip-Induced Anodization for Nanofabrication of Titanium,' J. Phys. Chem., 98(16), 4352 (1994)   DOI   ScienceOn
13 T. Yasuda, S. Yamasaki, and S. Gwo, 'Nanoscale selective-area epitaxial growth of Si using an ultrathin $SiO_2/Si_3N_4$ mask patterned by an atomic force microscope,' Appl. Phys. Lett., 77(24), 3917 (2000)   DOI   ScienceOn
14 Y.-R. Ma, C. Yu, Y.-D. Yao, Y. Liou, and S.-F. Lee, 'Tip-induced local anodic oxidation on the native $SiO_2$ layer of Si(111) using an atomic force microscope,' Phys. Rev. B, 64(19), 195324 (2001)   DOI   ScienceOn
15 K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian, and J. S. Harris, 'Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system,' Appl. Phys. Lett., 68(1), 34 (1996)