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http://dx.doi.org/10.5229/JKES.2005.8.3.130

Electrochemical Formation and Characterization of III-V Compound Semiconductor InSb Nanowires  

Lee, Kwan-Hyi (Materials Science and Technology Division, KIST)
Lee, Jong-Wook (Materials Science and Technology Division, KIST)
Park, Ho-Dong (Materials Science and Technology Division, KIST)
Jeung, Won-Young (Materials Science and Technology Division, KIST)
Lee, Jong-Yup (R&D Division, URi Fine Plating)
Publication Information
Journal of the Korean Electrochemical Society / v.8, no.3, 2005 , pp. 130-134 More about this Journal
Abstract
To the best knowledge, the formation and characterization of InSb nanowires have not been reported yet in spite of its good characteristics as a III-V compound semiconductor. The nanowire arrays were potentiostatically electrodeposited in a mixing solution of indium chloride, antimony chloride, citric acid, and potassium citrate according to our previous work on the electrodeposition of the stoichiometric InSb films. The electrical properties of nanowire arrays were measured by semiconductor parameter analyzer, and the microstructural analysis of the nanowires was conducted by employing XRD. Our experimental results indicate that the InSb nanowires have a highly preferred orientation of (220) direction and also exhibit electrical characteristics of n-type semiconductors which we, however, similar to semi-metals mainly due to their narrow band-gap and high electron mobility.
Keywords
InSb; Nanowire; Electrodeposition; Characterization.;
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1 T. Zhang, M. Debnath, S. K. Clowes, W. R. Branford, A. Bennett, C. Roberts, L. F. Cohen, and R. A. Stradling, 'InSb epilayers on GaAs (100) for spintronic and magneto-resistive sensor applications', Physica E, 20, 216 (2004)   DOI   ScienceOn
2 V. Senthilkumar, M. Thamilselvan, K. PremNazeer, S. K. Narayandass, D. Mangalaraj, B. Karunagaran, K. Kim, and J. Vi, 'Characterization of p-type In-Sb thin films prepared by vacuum evaporation', Vacuum, in press
3 K. H. Lee, H. Y. Lee, W. Y. Jeung, and W. Y. Lee, 'Magnetic properties and crystal structures of self-ordered ferromagnetic nanowires by ac electroforming', J. Appl. Phys. 91, 8513 (2002)   DOI   ScienceOn
4 K. H. Lee, Y. J. Kim, and W. Y. Jeung, 'Dimensional and Microstructural Dependence of the Magnetic Properties of the Electrodeposited Co(P) Nanowire Arrays', Mater. Sci. Forum, 437-438, 45 (2003)   DOI
5 K. H. Lee, G H. Kim, Y. J. Kim, and W. Y. Jeung, 'Formation and Characterization of Self-ordered Ferromagnetic Nanowires by AC Electroforming', Mater. Sci. Forum, 437-438, 499 (2003)   DOI
6 W. Schwarzacher, O. I. Kasyutich, P. R. Evans, M. G Darbyshire, V. M. Ge Yi, F. Fedosyuk, E. C. Rousseaux, and D. Decanini, 'Metal nanostructures prepared by template electrideposition', J. Magn. Magn. Mater, 198-199, 185 (1999)   DOI   ScienceOn
7 J. Ortega and H. Herrero, 'Preparation of InX(X=P, As, Sb) Thin Films by Electrochemical Methods', J. Electrochem. Soc., 136, 3388 (1989)   DOI
8 J-J. McChesney, J. Haigh, I. M. Dharmadasa, and D. J. Mowthorpe, 'Electrochemical growth of GaSb and InSb for applications in infra-red detector and optical communication systems', Opt. Mater., 6, 63 (1996)   DOI   ScienceOn
9 T. Fulop, C. Bekele, U. Landau, J. Angus, and K. Kash, 'Electrodeposition of polycrystalline InSb from aqueous electrolytes', Thin Solid Films, 449, 1 (2004)   DOI   ScienceOn
10 T. Miyazaki, M. Kunugi, Y. Kitamura, and S. Adachi, 'Epitaxial growth of InSb films by r.f. magnetron sputtering', Thin Solid Films, 287, 51 (1996)   DOI   ScienceOn
11 M. C. Debnath, T. Zhang, C. Roberts, L. F. Cohen, and R. A. Stradling, 'High-mobility InSb films on GaAs (001) substrate grown by the two-step growth process', J. Cryst. Growth, 267, 17 (2004)   DOI   ScienceOn
12 T. Nakamura, M. Katagiri, Y. Aratono, I. Kanno, S. Hishiki, O. Sugiura, and Y. Murase, 'Cryogenic neutron detector by InSb semiconductor detector with high-density helium-3 gas converter', Nucl. lnstrum. Meth. A, 520, 76 (2004)   DOI   ScienceOn
13 O. A. Mironov, M. Myronov, S. Durov, O. Drachenko, and J. Leotin, 'Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications', Physica B, 346-347, 548 (2004)   DOI   ScienceOn
14 A. Okamoto, H. Geka, I. Shibasaki, and K. Yoshida, 'Transport properties of InSb and InAs thin films on GaAs substrates', J. Cryst. Growth, 278, 604 (2005)   DOI   ScienceOn
15 K. H. Lee, J. Y. Lee and W. Y. leung, 'Electrical properties and characterization of the electrodeposited InSb semiconductor nanowires' , ECS 206th meeting, Abs. 191, Honolulu, Hawaii, 2004
16 이관희, 정원용, 이종엽, '전기도금에 의한 화학양론을 만족하는 III-V족 화합물 반도체 InSb의 제조방법', 대한민국 발명특허, 2004-0083711
17 K. H. Lee, J. Y. Lee, and W. Y. Jeung, 'III-V compound semiconductor InSb films electrodeposited from aqueous citric solutions', ECS 206th meeting, Abs. 48, Honolulu, Hawaii, 2004
18 M. P. Zach, K. H. Ng, and R. M. Penner, 'Molybdenum Nanowires by Electrodeposition', Science, 290, 2120 (2000)   DOI   ScienceOn