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http://dx.doi.org/10.7471/ikeee.2020.24.4.1156

A Study on SCR-based ESD Protection Circuit with High Holding Voltage and All-Direction Characteristics  

Jin, Seung-Hoo (Dept. of Electronics Engineering, Dankook University)
Do, Kyoung-Il (Dept. of Electronics Engineering, Dankook University)
Woo, Je-Wook (Dept. of Electronics Engineering, Dankook University)
Koo, Yong-Seo (Dept. of Electronics Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.24, no.4, 2020 , pp. 1156-1161 More about this Journal
Abstract
In this paper, we propose a new ESD protection circuit with improved electrical characteristics through structural changes of the existing one-way SCR. The proposed ESD protection circuit has high holding voltage characteristics due to the inserted N+ floating and P+ floating regions, and thus the latch-up immunity characteristics are improved. In addition, structural change enables ESD discharge in four types of Zapping mode (PD, PS, ND, NS), and has superior area efficiency than unidirectional SCR. In addition, the P+ floating and N+ floating lengths corresponding to the base length of the parasitic bipolar transistor, and the distance between P+ floating and N+ floating were designated as design variables, and the high holding voltage was verified through Synopsys' TCAD Simulator.
Keywords
ESD; SCR; Zapping Mode; Trigger Voltage; Holding Voltage;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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