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http://dx.doi.org/10.7471/ikeee.2020.24.4.1117

NO2 gas sensor using an AlGaN/GaN Heterostructure FET with SnO2 catalyst deposited by ALD technique  

Yang, Suhyuk (Dept. of Electronic and Electrical Engineering, Hongik University)
Kim, Hyungtak (Dept. of Electronic and Electrical Engineering, Hongik University)
Publication Information
Journal of IKEEE / v.24, no.4, 2020 , pp. 1117-1121 More about this Journal
Abstract
In this work, it was confirmed that a SnO2 catalyst deposited by an atomic layer deposition(ALD) process can be employed in AlGaN/GaN heterostructure FET to detect NO2 gas. The fabricated HFET sensors on AlGaN/GaN-on-Si platform demonstrated that the devices with or without n-situ SiN have sensitivity of 5.5 % and 38 % at 200 ℃, respectively with response to 100 ppm-NO2.
Keywords
Atomic layer deposition (ALD); $SnO_2$; AlGaN/GaN HFET; $NO_2$; Sensitivity; In-situ SiN;
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1 S. -T. Hung, C. -J, Chang, "SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors," Journal of Vacuum Science & Technology B, vol.30, p.041214, 2012. DOI: 10.1116/1.4736974   DOI
2 H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo and H. -I. Kwon, "Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOx-based p-type thin-film transistor," Sensors and Actuators B: Chemical, vol.288, pp.625-633, 2019. DOI: 10.1016/j.snb.2019.03.046   DOI
3 U. K. Mishra, P. Parikh, and Y. -F. Wu, "AlGaN/GaN HEMTs-An Overview of Device Operation and Applications," Proc. IEEE, vol.90, no.6, pp.1022-1031, 2002. DOI: 10.1109/JPROC.2002.1021567   DOI
4 S. -T. Hung, C. -J. Chang, C. -H. Hsu, B. H. Chu, C. F. Lo, C. -C. Hsu, S. J. Pearton, M. R. Holzworth, P. G. Whiting, N. G. Rudawski, K. S. Jones, A. Dabiran, P. Chow and F. Ren, "SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications," International Journal of Hydrogen Energy, vol.37, no.18, pp.13783-13788, 2012. DOI: 10.1016/j.ijhydene.2012.03.124   DOI
5 B. Yuliarto, G. Gumilar and N. L. W. Septiani, "SnO2 Nanostructure as Pollutant Gas Sensors: Synthesis, Sensing Performances, and Mechanism," Advances in Materials Science and Engineering, vol.2015, pp.1-14, 2015. DOI: 10.1155/2015/694823   DOI
6 Y. Halfaya, C. Bishop, A. Soltani, S. Sundaram, V. Aubry, P. L. Voss, J. P. Salvestrini and A. Ougazzaden, "Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems," Sensors, vol.16, no.3, p.273, 2016. DOI: 10.3390/s16030273   DOI
7 J. -H. Choi, H. Kim, H. -K. Sung and H. -Y. Cha, "Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions," Sensors, vol.19, no.24, p.5549, 2019. DOI: 10.3390/s19245549   DOI