Browse > Article
http://dx.doi.org/10.7471/ikeee.2022.26.4.722

A X-band 40W AlGaN/GaN Power Amplifier MMIC for Radar Applications  

Byeong-Ok, Lim (R&D Division, Electronic Device Solution Inc.)
Joo-Seoc, Go (R&D Division, Electronic Device Solution Inc.)
Keun-Kwan, Ryu (Department of Electronic Engineering, Hanbat National University)
Sung-Chan, Kim (Department of Electronic Engineering, Hanbat National University)
Publication Information
Journal of IKEEE / v.26, no.4, 2022 , pp. 722-727 More about this Journal
Abstract
In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm2. It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.
Keywords
Power amplifier; MMIC; GaN; HEMT; X-band;
Citations & Related Records
연도 인용수 순위
  • Reference
1 D. Runton, et al., "History of GaN: High- Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond," IEEE Microwave Magazine, vol.14, no.3, pp.82-466, 2013. DOI: 10.1109/MMM.2013.2240853   DOI
2 R. Pengelly, et al., "A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs," IEEE Transactions on Microwave Theory and Techniques, vol.60, no.6, pp.1764-1783, 2013. DOI: 10.1109/TMTT.2012.2187535   DOI
3 S. D'Angelo, et al., "A GaN MMIC chipset suitable for integration in future X-band space borne radar T/R module Frontends," in Proc. of 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), pp.1-4, 2016. DOI: 10.1109/MIKON.2016.7492014   DOI
4 D. Shin, et al., "X-band GaN MMIC power amplifier for the SSPA of a SAR system," in Proc. of 2017 IEEE International Symposium on RadioFrequency Integration Technology (RFIT), pp.93-95, 2017. DOI: 10.1109/RFIT.2017.8048093   DOI
5 Y. Lien, et al., "GaN technologies for applications from L- to Ka-band," in Proc. of 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), pp.1-5, 2017. DOI: 10.1109/COMCAS.2017.8244831   DOI
6 "APA091030D," Ace technologies corp., [internet], http://www.rfmiso.com.
7 "CMPA801B025D," Cree Inc., [internet], http://www.cree.com.
8 "TGA2624," Qorvo Inc., [internet], http://www.qorvo.com.
9 "CHA8610-99F," United Monolithic Semi., [internet], http://www.ums-gaas.com