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http://dx.doi.org/10.7471/ikeee.2022.26.4.553

RC Snubber Analysis for Oscillation Reduction in Half-Bridge Configurations using Cascode GaN  

Bongwoo, Kwak (Dept. of of Automotive Materials & Components R&D Group, Korea Institute of Industrial Technology)
Publication Information
Journal of IKEEE / v.26, no.4, 2022 , pp. 553-559 More about this Journal
Abstract
In this paper, RC snubber circuit design technology for oscillation suppression in half-bridge configuration of cascode gallium nitride (GaN) field effect transistors (FETs) is analyzed. A typical wide band-gap (WBG) device, cascode GaN FET, has excellent high-speed switching characteristics. However, due to such high-speed switching characteristics, a false turn-off problem is caused, and an RC snubber circuit is essential to suppress this. In this paper, the commonly used experimental-based RC snubber design technique and the RC snubber design technique using the root locus method are compared and analyzed. In the general method, continuous circuit changes are required until the oscillation suppression performance requirement is met based on experimental experience . However, in root locus method, the initial value can be set based on the non-oscillation R-C map. To compare the performance of the two aforementioned design methods, a simulation experiment and a switching experiment using an actual double pulse circuit are performed.
Keywords
cascode GaN FET; RC snubber; Oscillation; Root locus; Double pulse test;
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