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http://dx.doi.org/10.7471/ikeee.2022.26.4.537

A Study on Bond Wire Fusing Analysis of GaN Amplifier and Selection of Current Capacity Considering Transient Current  

Woo-Sung, Yoo (LIGNex1.Ltd.)
Yeon-Su, Seok (LIGNex1.Ltd.)
Kyu-Hyeok, Hwang (LIGNex1.Ltd.)
Ki-Jun, Kim (U-Tel)
Publication Information
Journal of IKEEE / v.26, no.4, 2022 , pp. 537-544 More about this Journal
Abstract
This paper analyzes the occurrence and cause of bond wires fusing used in the manufacture of pulsed high power amplifiers. Recently GaN HEMT has been spotlight in the fields of electronic warfare, radar, base station and satellite communication. In order to produce the maximum output power, which is the main performance of the high-power amplifier, optimal impedance matching is required. And the material, diameter and number of bond wires must be determined in consideration of not only the rated current but also the heat generated by the transient current. In particular, it was confirmed that compound semiconductor with a wide energy band gap such as GaN trigger fusing of the bond wire due to an increase in thermal resistance when the design efficiency is low or the heat dissipation is insufficient. This data has been simulated for exothermic conditions, and it is expected to be used as a reference for applications using GaN devices as verified through IR microscope.
Keywords
Transient current; Bond wire; Fuse current; Thermal resistance; Pulsed current;
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