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http://dx.doi.org/10.7471/ikeee.2022.26.3.520

A study on the Design of NPN BJT built-in SCR for Low Voltage Class ESD Protection  

Jeong, Seung-Gu (Dept. of Electronics Engineering, Dankook University)
Baek, Seung-Hwan (Dept. of Electronics Engineering, Dankook University)
Lee, Byung-Seok (Research Institute for Industrial Technology)
Koo, Yong-Seo (Dept. of Electronics Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.26, no.3, 2022 , pp. 520-523 More about this Journal
Abstract
In this paper, an ESD protection device with a simpler structure than the existing ESD protection device is proposed. The proposed new structure operates an additional NPN parasitic bipolar transistor by adding an N+ diffusion region and connecting it to the bridge region, thereby lowering the current gain. As a result, it was confirmed that the proposed ESD protection device has a trigger voltage of 10.8V and a holding voltage of 6.1V. It is expected to have reliability for 5V applications and is expected to have high tolerance characteristics.
Keywords
ESD; Latch-up; SCR; LRSCR; LVTSCR;
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  • Reference
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