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http://dx.doi.org/10.7471/ikeee.2022.26.3.422

Design of eFuse OTP IP for Illumination Sensors Using Single Devices  

Souad, Echikh (Dept. of Electronics Engineering, Changwon National University)
Jin, Hongzhou (Dept. of Electronics Engineering, Changwon National University)
Kim, DoHoon (Dept. of Electronics Engineering, Changwon National University)
Kwon, SoonWoo (Dept. of Electronics Engineering, Changwon National University)
Ha, PanBong (Dept. of Electronics Engineering, Changwon National University)
Kim, YoungHee (Dept. of Electronics Engineering, Changwon National University)
Publication Information
Journal of IKEEE / v.26, no.3, 2022 , pp. 422-429 More about this Journal
Abstract
A light sensor chip requires a small capacity eFuse (electrical fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) to trim analog circuits or set initial values of digital registers. In this paper, 128-bit eFuse OTP IP is designed using only 3.3V MV (Medium Voltage) devices without using 1.8V LV (Low-Voltage) logic devices. The eFuse OTP IP designed with 3.3V single MOS devices can reduce a total process cost of three masks which are the gate oxide mask of a 1.8V LV device and the LDD implant masks of NMOS and PMOS. And since the 1.8V voltage regulator circuit is not required, the size of the illuminance sensor chip can be reduced. In addition, in order to reduce the number of package pins of the illumination sensor chip, the VPGM voltage, which is a program voltage, is applied through the VPGM pad during wafer test, and the VDD voltage is applied through the PMOS power switching circuit after packaging, so that the number of package pins can be reduced.
Keywords
Single Device; Illumination Sensor; eFuse; OTP; Program Voltage;
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