[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.7471/ikeee.2022.26.2.196

Simulation-based P-well design for improvement of ESD protection performance of P-type embedded SCR device

Seo, Yong-Jin (Dept. of Fire Service, Sehan University)

Publication Information

Journal of IKEEE / v.26, no.2, 2022 , pp. 196-204 More about this Journal

Abstract

Electrostatic discharge (ESD) protection devices of P-type embedded silicon-controlled rectifier (PESCR) structure were analyzed for high-voltage operating input/output (I/O) applications. Conventional PESCR standard device exhibits typical SCR characteristics with very low-snapback holding voltages, resulting in latch-up problems during normal operation. However, the modified device with the counter pocket source (CPS) surrounding N⁺ source region and partially formed P-well (PPW) structures proposed in this study could improve latch-up immunity by indicating high on-resistance and snapback holding voltage.

Keywords

Electrostatic discharge (ESD); P-type embedded silicon-controlled rectifier (PESCR); counter pocket source (CPS); partially formed P-well (PPW); latch-up immunity; snapback holding voltage;

Citations & Related Records

Reference

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