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http://dx.doi.org/10.7471/ikeee.2022.26.1.50

The effect of deep level defects in SiC on the electrical characteristics of Schottky barrier diode structures  

Lee, Geon-Hee (Dept. of Electronic materials Engineering, Kwangwoon University)
Byun, Dong-Wook (Dept. of Electronic materials Engineering, Kwangwoon University)
Shin, Myeong-Cheol (Dept. of Electronic materials Engineering, Kwangwoon University)
Koo, Sang-Mo (Dept. of Electronic materials Engineering, Kwangwoon University)
Publication Information
Journal of IKEEE / v.26, no.1, 2022 , pp. 50-55 More about this Journal
Abstract
SiC is a power semiconductor with a wide bandgap, high insulation failure strength, and thermal conductivity, but many deep-level defects. Defects that appear in SiC can be divided into two categories, defects that appear in physical properties and interface traps that appear at interfaces. In this paper, Z1/2 trap concentration 0 ~ 9×1014 cm-3 reported at room temperature (300 K) is applied to SiC substrates and epi layer to investigate turn-on characteristics. As the trap concentration increased, the current density, Shockley-read-Hall (SRH), and Auger recombination decreased, and Ron increased by about 550% from 0.004 to 0.022 mohm.
Keywords
SiC; Defect; Z1/2; Sentaurus TCAD; Trap concentration; Recombination;
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