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http://dx.doi.org/10.7471/ikeee.2022.26.1.111

Reliability Analysis of 4H-SiC CMOS Device for High Voltage Power IC Integration  

Kang, Yeon-Ju (Dept. of Electronic Engineering, Sogang University)
Na, Jae-Yeop (Dept. of Electronic Engineering, Sogang University)
Kim, Kwang-Soo (Dept. of Electronic Engineering, Sogang University)
Publication Information
Journal of IKEEE / v.26, no.1, 2022 , pp. 111-118 More about this Journal
Abstract
In this paper, we studied 4H-SiC CMOS that can be integrated with high-voltage SiC power devices. After designing the CMOS on a 4H-SiC substrate, we compared the electrical characteristics with the reliability of high temperature operation by TCAD simulation. In particular, it was confirmed that changing HfO2 as the gate dielectric for reliable operation at high temperatures improves the thermal properties compared to SiO2. By researching SiC CMOS devices, we can integrate high-power SiC power devices with SiC CMOS for excellent performance in terms of efficiency and cost of high-power systems.
Keywords
4H-SiC; CMOS; inverter; temperature characteristic; $HfO_2$;
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