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http://dx.doi.org/10.7471/ikeee.2021.25.4.735

A study on SCR-based bidirectional ESD protection device with high holding voltage due to parallel NPN BJT  

Jung, Jang-Han (Dept. of Electronics Engineering, Dankook University)
Woo, Je-Wook (Dept. of Electronics Engineering, Dankook University)
Koo, Yong-Seo (Dept. of Electronics Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.25, no.4, 2021 , pp. 735-740 More about this Journal
Abstract
In this paper, we propose a new ESD protection device with high holding voltage with low current gain of parasitic NPN BJT by improving the structure of the existing LTDDSCR. The electrical characteristics of the proposed protection device were analyzed by HBM simulation using Synopsys' TCAD simulation, and the operation of the added BJT was confirmed by current flow, impact ionization and recombination simulation. In addition, the holding voltage characteristics were optimized with the design variables D1 and D2. As a result of the simulation, it was verified that the new ESD protection device has a higher holding voltage compared to the existing LTDDSCR and has a symmetrical bidirectional characteristic. Therefore, the proposed ESD protection device has high area efficiency when applied to an IC and is expected to improve the reliability of the IC.
Keywords
ESD; Latch-up; SCR; LTDDSCR; Holding Voltage;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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