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http://dx.doi.org/10.7471/ikeee.2021.25.3.467

Dependence of contact resistance in SiC device by annealing conditions  

Kim, Seong-Jeen (Dept. of Electronics Engineering, Kyungnam University)
Publication Information
Journal of IKEEE / v.25, no.3, 2021 , pp. 467-472 More about this Journal
Abstract
Stable operation of semiconductor devices is needed even at high temperatures. Among the structures of semiconductor devices, the area that can cause unstable electrical responses at high temperatures is the contact layer between the metal and the semiconductor. In this study, the effect of annealing conditions included in the process of forming a contact layer of nickel silicide(NiSix) on a p-type SiC layer on the specific contact resistance of the contact layer and the total resistance between the metal and the semiconductor was investigated. To this end, a series of electrodes for TLM (transfer length method) measurements were patterned on the 4 inch p-type SiC layer under conditions of changing annealing temperature of 1700 and 1800 ℃ and annealing time of 30 and 60 minutes. As a result, it was confirmed that the annealing conditions affect the resistance of the contact layer and the electrical stability of the device.
Keywords
TLM; high temperature; SiC; specific contact resistance; annealing;
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