Browse > Article
http://dx.doi.org/10.7471/ikeee.2021.25.2.371

A Study on the Dual Emitter Structure 4H-SiC-based LIGBT for Improving Current Driving Capability  

Woo, Je-Wook (Dept. of Electronics Engineering, Dankook University)
Lee, Byung-Seok (Dept. of Electronics Engineering, Dankook University)
Kwon, Sang-Wook (Dept. of Electronics Engineering, Dankook University)
Gong, Jun-Ho (Dept. of Electronics Engineering, Dankook University)
Koo, Yong-Seo (Dept. of Electronics Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.25, no.2, 2021 , pp. 371-375 More about this Journal
Abstract
In this paper, a SiC-based LIGBT structure that can be used at high voltage and high temperature is presented. In order to improve the low current characteristic, a dual-emitter symmetrical around the gate is inserted. In order to verify the characteristics of the proposed device, simulation and design were conducted using Sentaurus TCAD simulation, and a comparative study was conducted with a general LIGBT. In addition, splitting was performed by designating a variable for the length of the N-drift region in order to verify the electrical characteristics of the minority carriers. As a result of the simulation it was confirmed that the proposed dual-emitter structure flows a higher current at the same voltage than the conventional LIGBT.
Keywords
Silicon Carbide; MOSFET; LIGBT; Emitter; Current Driving Capability;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Kuan-Wei Chu, Wen-Shan Lee, Chi-Yin Cheng, Chih-Fang Huang, Member, Feng Zhao, Member, Lurng-Shehng Lee, Young-Shying Chen, Chwan-Ying Lee, and Min-Jinn Tsai, "Demonstration of Lateral IGBTs in 4H-SiC," IEEE ELECTRON DEVICE LETTERS, Vol.34, No.2 pp.286-288, 2013. DOI: 10.1109/LED.2012.2230240   DOI
2 Mihaela Alexandru, "4H-SiC Integrated Circuits for High Temperature and Harsh Environment Applications," p.16, 2013.
3 Baliga BJ, Silicon carbide power device, Springer, 2009.
4 K. Sheng et al, Yongxi Zhang, Ming Su, Jian H. Zhao, Xueqing Li, "Petre Alexandrov, Leonid Fursin, "Demonstration of the first SiC power integrated circuit," Solid-State Electronics, Vol.52, pp.1636-1646, 2008. DOI: 10.1016/j.sse.2008.06.037   DOI
5 P. G. Neudeck, Steven L. Garverick, David J. Spry, Liang-Yu Chen, Glenn M. Behiem, Michael J. Krasowski, Mehran Mehregany, "Extreme temperature 6H-SiC JFET integrated circuit technology," Physica Status Solidi (A) Applications and Materials, Vol.206, No.10, pp.2329-2345, 2009. DOI: 10.1002/pssa.200925188   DOI