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http://dx.doi.org/10.7471/ikeee.2021.25.2.356

A Study on the Charge Balance Characteristics of Super Junction MOSFET with Deep-Trench Technology  

Choi, Jong-Mun (Dept. of Energy IT Engineering, Far East University)
Huh, Yoon-Young (Dept. of Energy IT Engineering, Far East University)
Cheong, Heon-Seok (Dept. of Energy IT Engineering, Far East University)
Kang, Ey-Goo (Dept. of Energy IT Engineering, Far East University)
Publication Information
Journal of IKEEE / v.25, no.2, 2021 , pp. 356-361 More about this Journal
Abstract
Super Junction structure is the proposed structure to minimize the Trade-off phenomenon of power devices. Super Junction can have On-resistance(Ron) characteristics as less as five times than conventional structure. There are process methods that Multi-Epi and Deep-Trench of Super Junction structure. The reason for this is that Deep-Trench process is known to be a relatively difficult manufacturing method because it is easy to form a P-Pillar by burying impurities on top of a silicon substrate through a Deep-Trench process. However, the structure created by the Deep-Trench process has low On-resistance and high breakdown voltage, showing better efficiency. In this paper, we suggested a novel method in the process and designed structure with Charge Balance theory.
Keywords
Power Device; Trade-off; Super Junction; Deep-Trench; Charge Balance;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
연도 인용수 순위
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