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http://dx.doi.org/10.7471/ikeee.2021.25.2.350

A Study on Switching Characteristics of 1,200V Trench Gate Field stop IGBT Process Variables  

Jo, Chang Hyeon (Dept. of Energy IT Engineering, Far East University)
Kim, Dea Hee (Dept. of Energy IT Engineering, Far East University)
Ahn, Byoung Sup (Dept. of Energy IT Engineering, Far East University)
Kang, Ey Goo (Dept. of Energy IT Engineering, Far East University)
Publication Information
Journal of IKEEE / v.25, no.2, 2021 , pp. 350-355 More about this Journal
Abstract
IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low VCE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, VCE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.
Keywords
IGBT; $V_{CE-SAT}$; Switching loss; Gate oxide; Cell Pitch; Trench Gate;
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