1 |
Z. Hanmei, "Simulation of superjunction MOSFET devices," National university of Singapore, 2005.
|
2 |
Qian. L. Wang. J., Yang. Z. and Yan. G., "Fabrication of ultra-deep high-aspect-ratio isolation trench Without void and its application," 2010 IEEE 5th Intermational Conference on Nano/Micro Engineered and Molecular Systems, pp.654-657, 2010. DOI: 10.1109/NEMS.2010.5592490
DOI
|
3 |
G. H. Lee, B. S. Ahn and E. G. Kang, "Analysis of Electrical Characteristics According to the Pillar Spacing of 4.5 kV Super Junction IGBT," Journal of the Korean Institute of Electrical and Electronic Material Engineers, vol.33, no.3, pp.173-176, 2020. DOI: 10.4313/JKEM.2020.33.3.173
DOI
|
4 |
J. W. Lee, S. G. Kim, J. D. Kim, J. G. Koo, J. Y. Lee and K. S. Nam, "Formation of Passivation Layer and Its Effect on the Defect Generation during Trench Etching," Korean Journal of Materials Research, Vol.7, no.7, pp.634-640, 1998.
|
5 |
Lho Young Hwan, and Yil Suk Yang, "Design of 100V Super Junction Trench Power MOSFET with LowOn Resistance," ETRI Journal, vol.34, no.1, pp.134-137. 2012. DOI: 10.4218/ETRIJ.12.0211.0251
DOI
|
6 |
Baliga. B, "Advanced Power MOSFET concepts," Springer Science & Business Media, 2010.
|
7 |
H. Bartolf, A. Mihaila, I. Nistor, M. Jurisch, B. Leibold and M. Zimmermann, "Development of a 60um Deep Trench and Refill Process for Manufacturing Si-Based High-Voltage Super-Junction Structures," IEEE Transactions on Semiconductor Manufacturing, vol.26, no.4, pp. 529-541, 2013. DOI: 10.1109/TSM.2013.2272042
DOI
|