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http://dx.doi.org/10.7471/ikeee.2021.25.2.344

A Study on the Electrical Characteristics according to Growth of Trench SiO2 Inside Super Junction IGBT Pillar  

Lee, Geon Hee (Dept. of Energy IT, Far East University)
Ahn, Byoung Sup (Dept. of Energy IT, Far East University)
Kang, Ey Goo (Dept. of Energy IT, Far East University)
Publication Information
Journal of IKEEE / v.25, no.2, 2021 , pp. 344-349 More about this Journal
Abstract
This paper proposes a structure in which Trench SiO2 is grown inside of Super Junction IGBT P-Pillar. When observing the electric field in 3D, we checked the region where the electric field have not affected inside of the P-Pillar. The pillar region's portion resistance is varied by the breakdown voltage and size of each pillar, which reduces the size by growing SiO2 after trenching has no field effect inside of that. At 4.5kV the same breakdown voltage, it was confirmed that the On-state voltage drop improved by about 58%, 19% compared to Field Stop IGBT and conventional Super Junction IGBT.
Keywords
IGBT; Super Junction; Pillar; Silicon Deoxide; On-state Voltage drop;
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