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http://dx.doi.org/10.7471/ikeee.2021.25.2.309

Selective Operating Preamplifier Circuit for Low Voltage Static Random Access Memory  

Jeong, Hanwool (Dept. of Electronics Engineering, Kwangwoon University)
Publication Information
Journal of IKEEE / v.25, no.2, 2021 , pp. 309-314 More about this Journal
Abstract
The proposed preamplifier for the static random access memory reduces the time required for the sense amplifier enable during the read operation by 55%, which leads to a significant speed up the total spped. This is attirbuted to the novel circuit techqniue that cancels out the transistor mismatch which is induced by the process variation. In addition, a selective enable circuit for preamplifier circuit is proposed, so the proposed preamplifier is enabled only when it is required. Accordingly the energy overhead is limited below 4.45%.
Keywords
Low power circuit design; low voltage circuit design; preamplification; sense amplifier; static random access memory (SRAM);
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