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http://dx.doi.org/10.7471/ikeee.2021.25.2.280

Design of ESD Protection Circuit with improved Snapback characteristics Using Stack Structure  

Song, Bo-Bae (Korea Electronics Technology Institute)
Lee, Jea-Hack (Korea Electronics Technology Institute)
Kim, Byung-Soo (Korea Electronics Technology Institute)
Kim, Dong-Sun (Korea Electronics Technology Institute)
Hwang, Tae-Ho (Korea Electronics Technology Institute)
Publication Information
Journal of IKEEE / v.25, no.2, 2021 , pp. 280-284 More about this Journal
Abstract
In this paper, a new ESD protection circuit is proposed to improve the snapback characteristics. The proposed a new structure ESD protection circuit applying the conventional SCR structural change and stack structure. The electrical characteristics of the structure using penta-well and double trigger were analyzed, and the trigger voltage and holding voltage were improved by applying the stack structure. The electron current and total current flow were analyzed through the TCAD simulation. The characteristics of the latch-up immunity and excellent snapback characteristics were confirmed. The electrical characteristics of the proposed ESD protection circuit were analyzed through HBM modeling after forming a structure through TCAD simulator.
Keywords
Stack; penta-well; Double-Trigger; Holding voltage; Latch-up;
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