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http://dx.doi.org/10.7471/ikeee.2021.25.1.1

Temperature reliability analysis according to the gate dielectric material of 4H-SiC UMOSFET  

Jung, Hang-San (Dept. of Electronics Engineering, Sogang University)
Heo, Dong-Beom (Dept. of Electronics Engineering, Sogang University)
Kim, Kwang-Su (Dept. of Electronics Engineering, Sogang University)
Publication Information
Journal of IKEEE / v.25, no.1, 2021 , pp. 1-9 More about this Journal
Abstract
In this paper, a 4H-SiC UMOSFET was studied which is suitable for high voltage and high current applications. In general, SiO2 is a material most commonly used as a gate dielectric material in SiC MOSFETs. However, since the dielectric constant value is 2.5 times lower than 4H-SiC, it suffers a high electric field and has poor characteristics in the SiO2/SiC junction. Therefore, the static characteristics of a device with high-k material as a gate dielectric and a device with SiO2 were compared using TCAD simulation. The results show BV decreased, VTH decreased, gm increased, and Ron decreased. Especially when the temperature is 300K, the Ron of Al2O3 and HfO2 decreases by 66.29% and 69.49%. and at 600K, Ron decreases by 39.71% and 49.88%, respectively. Thus, Al2O3 and HfO2 are suitable as gate dielectric materials for high voltage SiC MOSFET.
Keywords
4H-SiC; UMOSFET; high-k; temperature characteristics; TCAD Simulation;
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