1 |
B. J. Baliga, "Power semiconductor device figure of merit for high-frequency applications," IEEE Trans. Electron Devices, Vol.64, no.3, pp.674-691, 2017. DOI: 10.1109/TED.2017.2653239
DOI
|
2 |
Y. Kobayashi, S. Harada, H. Ishimori, S. Takasu, T. Kojima, K. Ariyoshi, M. Sometani, J. Senzaki, M. Takei, Y. Tanaka and H. Okumura, "3.3kV-class 4H-SiC UMOSFET by Double-trench with Tilt Angle Ion Implantation," Material Science Forum, Vol. 858, pp.974-977, 2016. DOI: 10.4028/www.scientific.net/MSF.858.974
DOI
|
3 |
B. J. Baliga, "Silicon Carbide Power Devices," NCSU, USA: World Scientific, pp.259-304, 2006.
|
4 |
N. Iwamura, "SiC power device design and fabrication," Wide Bandgap Semiconductor Power Devices, pp.104-106, 2019.
|
5 |
Huang Runhua et al., "Design and fabrication of a 3.3kV 4H-SiC MOSFET," Journal of Semiconductors, Vol.36, No.9, 2015. DOI: 10.1088/1674-4926/36/9/094002
|
6 |
B. J. Baliga, "Fundamentals of Power Semiconductor Devices," NY, USA: Springer, pp.23-166, 2010.
|
7 |
G. De Martino, F. Pezzimenti, F. G. Della Corte, G. Adinolfi and G. Graditi, "Design and Numerical Characterization of a Low Voltage Power MOSFET in 4H-SiC for photovoltaic Applications," 2017 13th conference on Ph. D. Research in Microelectronics and Electronics (Prime), IEEE pp.221-224, 2017. DOI: 10.1109/PRIME.2017.7974147
|
8 |
H. Okumura, H. Harima, Prof. T. Kimoto, M. Yoshimoto, H. Watanabe, T. Hatayama, H. Matsuura, T. Funaki and Y. Sano, "Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination," Materials Science Forum, Vol.778-780, pp915-918, 2014. DOI: 10.4025/www.scientific.net/msf.778-780. 915
DOI
|
9 |
W. Ni, X. Wang, M. Xu, M. Li, C. Feng, H. Xiao, W. Li, Q. Wang, H. Schlichting and T. Erlbacher, "Design and Fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body structure," 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China, IEEE, pp.50-53, 2019. DOI: 10.1109/SSLChinaIFWS49075.2019.9019
|
10 |
A. Poggi, F. Bergamini, S. Solmi, M. Canino, and A. Carnera, "Effects of heating ramp rates on the characteristics of Al implanted 4H-SiC junctions," Appl. Phys. Lett., vol.88, no.16, pp.162106, 2006.
DOI
|
11 |
S. Hu et al,. "A comparative study of a deep trench superjunction SiC VDMOS device," Journal of Computational Electronics, Vol.18, no.2, pp. 553-560, 2019. DOI: 10.1007/s10825-019-01318-2
DOI
|