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http://dx.doi.org/10.7471/ikeee.2020.24.2.604

The Effect of Post-deposition Annealing on the Properties of Ni/AlN/4H-SiC Structures  

Min, Seong-Ji (Dept. of Electronic Materials Engineering, Kwangwoon University)
Koo, Sang-Mo (Dept. of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of IKEEE / v.24, no.2, 2020 , pp. 604-609 More about this Journal
Abstract
We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.
Keywords
Rapid thermal annealing; sound wave; Schottky barrier diode; Aluminum nitride; Silicon carbide;
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