1 |
Y. Wang, X. Tao, R. Tao, J. Zhou, Q. Zhang, D. Chen, H. Jin, S. Dong, J. Xie, Y. Q. Fu, "Acoustofluidics along inclined surfaces based on AlN/Si Rayleigh surface acoustic waves," Sensors and Actuators A: Physical, vol.306, pp.111967, 2020. DOI: 10.1016/j.sna.2020.111967
DOI
|
2 |
E. Ledesma et al., "AlN Piezoelectric Micromachined Ultrasonic Transducer Array Monolithically Fabricated on Top of Pre-Processed CMOS Substrates," 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII, pp.655-658, 2019. DOI: 10.1109/TRANSDUCERS.2019.8808706
|
3 |
L. Vergara, M. Clement, E. Iborra, A. Sanz-Hervas, J. Garcia Lopez, Y. Morilla, J. Sangrador, M. A. Respaldiza, "Influence of oxygen and argon on the crystal quality and piezoelectric response of AlN sputtered thin films," Diam. Relat. Mater, vol.13, pp.839-842, 2004. DOI: 10.1016/j.diamond.2003.10.063
DOI
|
4 |
J. H. Edgar, Z. Gu, L. Gu, D. J. Smith, "Interface properties of an AIN/(AIN) x(SiC) 1-x/4H-SiC heterostructure," Phys. Status Solid Appl. Mater. Sci, vol.203, pp.3720-3725, 2006. DOI: 10.1002/pssa.200622279
|
5 |
X. H. Xu, H. S. Wu, C. J. Zhang, Z. H. Jin, "Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering," Thin Solid Films, vol. 388, pp.62-67, 2001. DOI: 10.1016/S0040-6090(00)01914-3
DOI
|
6 |
T. Ghz, W. Xing, Z. Liu, H. Qiu, K. Ranjan, Y. Gao, "InAlN/GaN HEMTs on Si With High fT of 250 GHz," IEEE Electron Device Lett., vol.39, pp.75-78, 2018. DOI: 10.1109/LED.2017.2773054
DOI
|
7 |
T. Mattila, R. Nieminen, "Ab initio study of oxygen point defects in GaAs, GaN, and AlN," Phys. Rev. B - Condens. Matter Mater. Phys., vol.54, pp.16676-16682, 1996. DOI: 10.1103/PhysRevB.54.16676
DOI
|
8 |
R. Singh, S. H. Christiansen, O. Moutanabbir, U. Gosele, "The phenomenology of ion implantation-induced blistering and thin-layer splitting in compound semiconductors," J. Electron. Mater., vol.39, pp.2177-2189, 2010. DOI: 10.1007/s11664-010-1334-x
DOI
|
9 |
Y. J. Lv, X. B. Song, Y. G. Wang, Y. L. Fang, Z. H. Feng, "Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors," Nanoscale Res. Lett., vol.11, no.373, 2016. DOI: 10.1186/s11671-016-1591-6
|
10 |
F. Jiang, C. Zheng, W. Changda, Fang. Li, P. Wenqing, D. Yong, J. Dai, "The growth and properties of ZnO film on Si (111) substrate with an AlN buffer by AP-MOCVD," J. Lumin., vol.123, pp.905-907, 2007. DOI: 10.1016/j.jlumin.2006.01.322
|
11 |
C. M. Lin, Y. Y. Chen, V. V. Felmetsger, W. C. Lien, T. Riekkinen, D. G. Senesky, A. P. Pisano, "Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures," J. Micromechanics Microengineering, vol.23, pp.25019, 2013. DOI: 10.1088/0960-1317/23/2/025019
DOI
|
12 |
S. Swaminathan, B. Srinivasa Rao, V. Jayaram, "The influence of oxygen impurities on the formation of AlN-Al composites by infiltration of molten Al-Mg," Mater. Sci. Eng. A, vol.337, pp.134-139, 2002. DOI: 10.1016/S0921-5093(02)00002-3
DOI
|
13 |
J. Jarrige, J. P. Lecompte, J. Mullot, G. Muller, "Effect of oxygen on the thermal conductivity of aluminium nitride ceramics," J. Eur. Ceram. Soc., vol.17, pp.1891-1895, 1997. DOI: 10.1016/S0955-2219(97)00078-2
DOI
|