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http://dx.doi.org/10.7471/ikeee.2020.24.2.592

Analysis of electrical characteristics according to the design parameter of 1200V 4H-SiC trench MOSFET  

Woo, Je-Wook (Dept. of Electronics Engineering, Dankook University)
Seo, Jeong-Ju (Dept. of Electronics Engineering, Dankook University)
Jin, Seung-hoo (Dept. of Electronics Engineering, Dankook University)
Koo, Yong-Seo (Dept. of Electronics Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.24, no.2, 2020 , pp. 592-597 More about this Journal
Abstract
Since SiC has 10 times higher breakdown field and 3 times higher energy gap than Si, it is possible to manufacture an excellent power MOSFET with a high breakdown voltage. However, since it has a high on-resistance due to low mobility, a Trench MOSFET has been proposed to lower it, but at the same time, it has a problem that BV decreases. The purpose of this paper is to design a 1200V trench MOSFET, and to solve this, split Epi depth, Trench depth, and Trench depth to Epi depth, which are important variables for BV and Ron, to achieve maximum electric field, BV, Ron's reliability characteristics were compared and analyzed. As the epi depth increased, the trench depth decreased, and the epi depth decreased at the trench depth, the maximum electric field decrease, BV increase, and Ron increase were confirmed. All results were simulated by sentaurus TCAD.
Keywords
SiC; Trench MOSFET; Electric field; Breakdown voltage; On-resistance;
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