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http://dx.doi.org/10.7471/ikeee.2020.24.2.435

Electrical and optical properties of ZnO:Al transparent conductive films with thermal treatments  

Ma, Tae Young (Dept. of Electrical Engineering & ERI, Gyeongsang National University)
Park, Ki Cheol (Dept. of Semiconductor Engineering & ERI, Gyeongsang National University)
Publication Information
Journal of IKEEE / v.24, no.2, 2020 , pp. 435-440 More about this Journal
Abstract
ZnO:Al films with about 500 nm thick were prepared by RF magnetron sputtering. The ZnO:Al films were annealed at 100 ℃, 200 ℃, 300 ℃, and 400 ℃ for 10 h, respectively. The resistivity, carrier concentration, and mobility variation of ZnO:Al films with heat treatments were measured. The causes of the resistivity variation of ZnO:Al films with heat treatments were investigated by utilizing the results of x-ray diffraction and field emission scanning electron microscope. The energy band gap, Urbach energy, and refractive index were obtained from the transmittance of ZnO:Al films. The change in electrical properties of the ZnO:Al film was explained in relation to the optical properties.
Keywords
ZnO:Al films; annealing; mobility; Urbach; transmittance;
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