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http://dx.doi.org/10.7471/ikeee.2020.24.1.194

Relationship of Threshold Voltage Roll-off and Gate Oxide Thickness in Asymmetric Junctionless Double Gate MOSFET  

Jung, Hakkee (Dept. of Electronic Engineering, Kunsan National University)
Publication Information
Journal of IKEEE / v.24, no.1, 2020 , pp. 194-199 More about this Journal
Abstract
The threshold voltage roll-off for an asymmetric junctionless double gate MOSFET is analyzed according to the top and bottom gate oxide thicknesses. In the asymmetric structure, the top and bottom gate oxide thicknesses can be made differently, so that the top and bottom oxide thicknesses can be adjusted to reduce the leakage current that may occur in the top gate while keeping the threshold voltage roll-off constant. An analytical threshold voltage model is presented, and this model is in good agreement with the 2D simulation value. As a result, if the thickness of the bottom gate oxide film is decreased while maintaining a constant threshold voltage roll-off, the top gate oxide film thickness can be increased, and the leakage current that may occur in the top gate can be reduced. Especially, it is observed that the increase of the bottom gate oxide thickness does not affect the threshold voltage roll-off.
Keywords
asymmetric; junctionless; threshold voltage roll-off; oxide thickness; double gate;
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