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http://dx.doi.org/10.7471/ikeee.2019.23.4.1309

A Study on SCR-Based ESD Protection Circuit with PMOS  

Kwak, Jae-Chang (Dept. of Computer Science, Seokyeong University)
Publication Information
Journal of IKEEE / v.23, no.4, 2019 , pp. 1309-1313 More about this Journal
Abstract
In this paper, the electrical characteristics of Gate grounded NMOS(GGNMOS), Lateral insulated gate bipolar transistor(LIGBT), Silicon Controlled Rectifier(SCR), and Proposed ESD protection device were compared and analyzed. First, the trigger voltage and holding voltage were verified by simulating the I-V characteristic curve for each device. After that, the robustness was confirmed by HBM 4k simulation for each device. As a result of HBM 4k simulation, the maximum temperature of the proposed ESD protection device is lower than that of GGNMOS and GGLIGBT and SCR, which means that the robustness is improved, which means that the ESD protection device is excellent in terms of reliability.
Keywords
SCR; GGNMOS; Trigger voltage; Holding voltage; Robustness;
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