Browse > Article
http://dx.doi.org/10.7471/ikeee.2019.23.4.1175

Chemical Mechanical Polishing Characteristics of Mixed Abrasive Silica Slurry (MAS) by adding of Manganese oxide (MnO2) Abrasive  

Seo, Yong-Jin (Dept. of Fire Service, Sehan University)
Publication Information
Journal of IKEEE / v.23, no.4, 2019 , pp. 1175-1181 More about this Journal
Abstract
In this paper, we have studied the chemical mechanical polishing(CMP) characteristics of mixed abrasive silica slurry(MAS) retreated by adding of manganese oxide(MnO2) abrasives within 1:10 diluted silica slurry. A slurry designed for optimal performance should produce high removal rates, acceptable polishing selectivity with respect to the underlying layer, low surface defects after polishing, and good slurry stability. The polishing performances of MnO2 abrasive-added MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performances such as removal rate and non-uniformity. As an experimental result, we obtained the comparable slurry characteristics compared to original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, our proposed MnO2-MAS can be useful to save on the high cost of slurry consumption since we used a 1:10 diluted silica slurry.
Keywords
CMP(chemical mechanical polishing); Slurry; MAS(mixed abrasive slurry); Removal rates; $MnO_2$;
Citations & Related Records
연도 인용수 순위
  • Reference
1 W. S. Lee, S. Y. Kim, Y. J. Seo, and J. K. Lee, "An optimization of tungsten plug chemical mechanical polishing (CMP) using different consumables," Journal of Materials Science: Materials in Electronics, Vol.12, No.1, pp.63-68, 2001. DOI: 10.1023/A:1011276830620   DOI
2 W. Ong, S. Robles, S. Sohn, and B. C. Nguyen, "Characterization of Inter-Metal and Pre-Metal Dielectric Oxides for Chemical Mechanical Polishing Process Integration," VMIC Conference, pp.197, 1993.
3 Y. Kamigata, Y. Kurata, K, Masuda, J. Amanokura, M. Yoshida, and M. Hanazono, "Why abrasive free Cu slurry is promising?," Mater. Res. Soc. Symp. Proc., Vol.671, p.M1.3, 2001. DOI: 10.1557/PROC-671-M1.3
4 R. Carpio, J. Farkas, and R. Jairath, "Initial study on copper CMP slurry chemistries," Thin Solid Films, Vol.266, p.238, 1995. DOI: 10.1016/0040-6090(95)06649-7   DOI
5 Y. J. Seo, "Methodological Study on the Recycle of Oxide-chemical Mechanical Polishing Slurry," Journal of the Korean Physical Society, Vol.50, No.3, pp.700-707, 2007. DOI: 10.3938/jkps.50.700   DOI
6 S. V. Babu, A. Jindal, and S. Hegde,, "Chemicalmechanical polishing," U.S. Pat. Appl., No.US20030047710A1, 2001.
7 A. Jindal, S. Hegde, and S. V. Babu, "Chemical mechanical polishing using mixed abrasive slurry," Electrochemical and Solid-State Letters, Vol.5, No.4, pp.G48-G50, 2002. DOI: 10.1149/1.1479297   DOI
8 S. Kishii, R. Suzuki, A. Ohishi, and Y. Arimoto, "Completely planarized W plugs using MnO/sub 2/CMP," Tech. Dig. Int. Electron Devices Meet., p.465, 1995. DOI: 10.1109/IEDM.1995.499239
9 T. Hara, T. Kurosu, and T. Doy, "Chemical mechanical polishing of copper and barrier layer by manganese(IV) oxide slurry," Electrochemical and Solid-State Letters, Vol.4, No.12, p.G109, 2001. DOI: 10.1149/1.1391936   DOI
10 T. Hara, T. Tomisawa, T. Kurosu, and T. Doy, "Chemical mechanical polishing of polyarylether low dielectric constant layers by manganese oxide slurry," J. Electrochemical Society, Vol.146, No.6, pp.2333-2336, 1999. DOI: 10.1149/1.1391936   DOI
11 Y. J. Seo, S. W. Park, and W. S. Lee, "Effects of manganese oxide-mixed abrasive slurry on the tetraethyl orthosilicate oxjde chemical mechanical polishing for plnarization of interlayer dielectric film in the multilevel interconnection," Journal of Vacuum Science & Technology A, Vol.26 No.4, pp.996-1001, 2008. DOI: 10.1116/1.2936225   DOI
12 Y. J. Seo, S. Y. Kim, and W. S. Lee, "Optimization of Pre-Metal Dielectric (PMD) Materials," Journal of Materials Science: Materials in Electronics, Vol.12, No.9, pp.551-554, 2001. DOI: 10.1023/A:101246172   DOI
13 W. J. Patrick, W. L. Guthrie, C. L. Standley and P. M. Schiable, "Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnection," J. of Electrochemical Soc., Vol.138, p.555, 1991. DOI: 10.1149/1.2085872
14 Y. J. Seo, W.-S. Lee, and Pochi Yeh, "Improvements of oxide-chemical mechanical polishing performances and aging effect of alumina and silica mixed abrasive slurries," Microelectronic Engineering, Vol.75, pp.361-366, 2004. DOI: 10.1016/j.mee.2004.07.062   DOI
15 Y. J. Seo, "Oxide-chemical mechanical polishing characteristics using silica slurry retreated by mixing of original and used slurry," Microelectronic Engineering, Vol.77, pp.263-269, 2005. DOI: 10.1016/j.mee.2004.11.015   DOI