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http://dx.doi.org/10.7471/ikeee.2019.23.3.832

3.3kV Low Resistance 4H-SiC Semi-SJ MOSFET  

Cheon, Jin-Hee (Dept. of Electronics Engineering, Sogang University)
Kim, Kwang-Soo (Dept. of Electronics Engineering, Sogang University)
Publication Information
Journal of IKEEE / v.23, no.3, 2019 , pp. 832-838 More about this Journal
Abstract
In this paper, 4H-SiC MOSFET, the next generation power semiconductor device, was studied. In particular, Semi-SJ MOSFET structures with improved electrical characteristics than conventional DMOSFET structures were proposed in the class of 3300V, and static characteristics of conventional and proposed structures were compared and analyzed through TCAD simulations. Semi-SuperJunction MOSFET structure is partly structure that introduces SuperJunction, improves Electric field distribution through the two-dimensional depletion effect, and increases breakdown voltage. Benefit from the improvement of breakdown voltage, which can improve the on resistance as high doping is possible. The proposed structure has a slight reduction in breakdown voltage, but has an 80% decrease in on resistance compared to the conventional DMOSFET structure, and a 44% decrease in on resistance compared to the Current Spreading Layer(CSL) structure that improves the conventional DMOSFET structure.
Keywords
4H-SiC; semi-superjunction; superjunction; breakdown voltage; on resistance;
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