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http://dx.doi.org/10.7471/ikeee.2019.23.3.811

Current-Voltage and Conductance Characteristics of Silicon-based Quantum Electron Device  

Seo, Yong-Jin (Dept. of Fire Service, Sehan University)
Publication Information
Journal of IKEEE / v.23, no.3, 2019 , pp. 811-816 More about this Journal
Abstract
The silicon-adsorbed oxygen(Si-O) superlattice grown by ultra high vacuum-chemical vapor deposition(UHV-CVD) was introduced as an epitaxial barrier for silicon quantum electron devices. The current-voltage (I-V) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the Si-O superlattice can serve as an epitaxially grown insulating layer as possible replacement of silicon-on-insulator(SOI). This thick barrier may be useful as an epitaxial insulating gate for field effect transistors(FETs). The rationale is that it should be possible to fabricate a FET on top of another FET, moving one step closer to the ultimate goal of future silicon-based three-dimensional integrated circuit(3DIC).
Keywords
Superlattice; Qunatum; Epitaxial; SOI; FET; 3DIC;
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