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http://dx.doi.org/10.7471/ikeee.2019.23.3.756

Low Resistance SC-SJ(Shielding Connected-Super Junction) 4H-SiC UMOSFET with 3.3kV Breakdown Voltage  

Kim, Jung-hun (Dept. of Electronics Engineering, Sogang University)
Kim, Kwang-Soo (Dept. of Electronics Engineering, Sogang University)
Publication Information
Journal of IKEEE / v.23, no.3, 2019 , pp. 756-761 More about this Journal
Abstract
In this paper, we propose SC-SJ(Shielding Connected-Super Junction) UMOSFET structure in which p-pillars of conventional 4H-SiC Super Junction UMOSFET structures are placed under the shielding region of UMOSFET. In the case of the proposed SC-SJ UMOSFET, the p-pillar and the shielding region are coexisted so that no breakdown by the electric field occurs in the oxide film, which enables the doping concentration of the pillar to be increased. As a result, the on-resistance is lowered to improve the static characteristics of the device. Through the Sentaurus TCAD simulation, the static characteristics of proposed structure and conventional structure were compared and analyzed. The SC-SJ UMOSFET achieves a 50% reduction in on-resistance compared to the conventional structure without any change in the breakdown voltage.
Keywords
4H-SiC; super junction; Trench mosfet; breakdown voltage; electric field;
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