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http://dx.doi.org/10.7471/ikeee.2019.23.2.704

Effects of Annealing Gas and Pressure Conditions on the Electrical Characteristics of Tunneling FET  

Song, Hyun-Dong (Dept. of Electronics Engineering, Chungnam National University)
Song, Hyeong-Sub (Dept. of Electronics Engineering, Chungnam National University)
Babu, Eadi Sunil (Dept. of Electronics Engineering, Chungnam National University)
Choi, Hyun-Woong (Dept. of Electronics Engineering, Chungnam National University)
Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
Publication Information
Journal of IKEEE / v.23, no.2, 2019 , pp. 704-709 More about this Journal
Abstract
In this paper, the electrical characteristics of tunneling field effect transistor(TFET) was studied for different annealing conditions. The TFET samples annealed using hydrogen forming gas(4 %) and Deuterium($D_2$) forming gas(4 %). All the measurements were conducted in noise shielded environment. The results show that subthreshold slope(SS) decreased by 33 mV/dec after annealing process compared to before annealing. Under various temperature range, the noise is improved by average of 31.2 % for 10 atm Deuterium gas at $V_G=3V$ condition. It is also noticed that, post metal annealing with $D_2$ gas reduces the noise by average of 30.7 % at $I_D=100nA$ condition.
Keywords
Low frequency noise; Subthreshold slope; FD-SOI TFET; Post metal annealing.; Trap;
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