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http://dx.doi.org/10.7471/ikeee.2019.23.2.425

High performance X-band power amplifier MMIC using a 0.25 ㎛ GaN HEMT technology  

Lee, Bok-Hyung (AESA Radar R&D Center, Hanwha Systems)
Park, Byung-Jun (AESA Radar R&D Center, Hanwha Systems)
Choi, Sun-Youl (AESA Radar R&D Center, Hanwha Systems)
Lim, Byeong-Ok (R&D Division, GP Inc.)
Go, Joo-Seoc (R&D Division, GP Inc.)
Kim, Sung-Chan (Department of Electronic Engineering, Hanbat National University)
Publication Information
Journal of IKEEE / v.23, no.2, 2019 , pp. 425-430 More about this Journal
Abstract
This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.
Keywords
Power amplifier; MMIC; GaN; HEMT; X-band;
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