High performance X-band power amplifier MMIC using a 0.25 ㎛ GaN HEMT technology
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Lee, Bok-Hyung
(AESA Radar R&D Center, Hanwha Systems)
Park, Byung-Jun (AESA Radar R&D Center, Hanwha Systems) Choi, Sun-Youl (AESA Radar R&D Center, Hanwha Systems) Lim, Byeong-Ok (R&D Division, GP Inc.) Go, Joo-Seoc (R&D Division, GP Inc.) Kim, Sung-Chan (Department of Electronic Engineering, Hanbat National University) |
1 | D. Runton, et al., "History of GaN : High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond," IEEE Microwave Magazine, vol.14, no.3, pp.82-466, 2013. DOI: 10.1109/MMM.2013.2240853 DOI |
2 | R. Pengelly, et al., "A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs," IEEE Transactions on Microwave Theory and Techniques, vol.60, no.6, pp.1764-1783, 2013. DOI: 10.1109/TMTT.2012.2187535 DOI |
3 | S. D'Angelo, et al., "A GaN MMIC chipset suitable for integration in future X-band space borne radar T/R module Frontends," in Proc. of 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), pp.1-4, 2016. DOI: 10.1109/MIKON.2016.7492014 |
4 | D. Shin, et al., "X-band GaN MMIC power amplifier for the SSPA of a SAR system," in Proc. of 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), pp.93-95, 2017. DOI: 10.1109/RFIT.2017.8048093 |
5 | Y. Lien, et al., "GaN technologies for applications from L- to Ka-band," in Proc. of 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), pp.1-5, 2017. DOI: 10.1109/COMCAS.2017.8244831 |
6 | "APA091030D," Ace technologies corp., [internet], http://www.rfmiso.com. |
7 | "CMPA801B025D," Cree Inc., [internet], http://www.cree.com. |
8 | "TGA2624," Qorvo Inc., [internet], http://www.qorvo.com. |
9 | "CHA8610-99F," United Monolithic Semi., [internet], http://www.ums-gaas.com |
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