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http://dx.doi.org/10.7471/ikeee.2019.23.2.375

Thermal treatments effects on the properties of zinc tin oxide transparent thin film transistors  

Ma, Tae Young (Dept. of Electrical Engineering & ERI, Gyeongsang National University)
Publication Information
Journal of IKEEE / v.23, no.2, 2019 , pp. 375-379 More about this Journal
Abstract
$ZnO-SnO_2(ZTO)$ was deposited by RF magnetron sputtering using a ceramic target whose Zn atomic ratio to Sn is 2:1 as a target, and the crystal structure variation with thermal treats was investigated. Transparent thin film transistors (TTFT) were fabricated using the ZTO films as active layers. About 100 nm-thick $Si_3N_4$ film grown on 100 nm-thick $SiO_2$ film was adopted as gate dielectrics. The mobility, threshold voltage, $I_{on}/I_{off}$, and interface trap density were obtained from the transfer characteristics of ZTO TTFTs. The effects of substrate temperature, and post-annealing on the property variation of ZTO TTFT were analyzed.
Keywords
Transparent thin film transistors; ZnO-SnO2 films; mobility; interface trap density; annealing;
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