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http://dx.doi.org/10.7471/ikeee.2019.23.1.338

A Study on SCR of New Structure with High Holding Voltage Characteristics by Applying Series Connected-NPN and N-Stack Technology  

Seo, Jeong-Ju (Dept. of Electronics Engineering, DanKook University)
Kwon, Sang-Wook (Dept. of Electronics Engineering, DanKook University)
Do, Kyoung-Il (Dept. of Electronics Engineering, DanKook University)
Lee, Byung-Seok (Dept. of Electronics Engineering, DanKook University)
Koo, Yong-Seo (Dept. of Electronics Engineering, DanKook University)
Publication Information
Journal of IKEEE / v.23, no.1, 2019 , pp. 338-341 More about this Journal
Abstract
In this paper, we propose a novel ESD device with improved characteristics of LVTSCR, which is a representative ESD protection device, and verify the N-stack technology for design optimized for each required voltage of a specific application. The characteristics of the holding voltage and the trigger voltage, which are the main parameters, are examined and the temperature characteristic, which is an indicator of the tolerance characteristic, is also verified. well region and a parasitic NPN to form a series-connected structure. We used synopsys' T-cad simulation tool for characterization.
Keywords
ESD; SCR; BJT; holding voltage;
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