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http://dx.doi.org/10.7471/ikeee.2019.23.1.326

Development of Si(110) CMOS process for monolithic integration with GaN power semiconductor  

Kim, Hyung-tak (School of Electronics and Electrical Engineering, Hongik University)
Publication Information
Journal of IKEEE / v.23, no.1, 2019 , pp. 326-329 More about this Journal
Abstract
Gallium nitride(GaN) has been a superior candidate for the next generation power electronics. As GaN-on-Si substrate technology is mature, there has been new demand for monolithic integration of GaN technology with Si CMOS devices. In this work, (110)Si CMOS process was developed and the fabricated devices were evaluated in order to confirm the feasibility of utilizing domestic foundry facility for monolithic integration of Si CMOS and GaN power devices.
Keywords
GaN; (110)Si; monolithic integration; power semiconductor; CMOS;
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