4H-SiC Curvature VDMOSFET with 3.3kV Breakdown Voltage |
Kim, Tae-Hong
(Dept. of Electronics Engineering, Sogang University)
Jeong, Chung-Bu (Dept. of Electronics Engineering, Sogang University) Goh, Jin-Young (Dept. of Electronics Engineering, Sogang University) Kim, Kwang-Soo (Dept. of Electronics Engineering, Sogang University) |
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