[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.7471/ikeee.2018.22.4.1230

Electrical Properties of Al₂O₃ Gate Oxide on 4H-SiC with Post Annealing Fabricated by Aerosol Deposition

Kim, Hong-Ki (National Institute for Nanomaterials Technology, Pohang University of Science and Technology (POSTECH))
Kim, Seong-jun (National Institute for Nanomaterials Technology, Pohang University of Science and Technology (POSTECH))
Kang, Min-Jae (National Institute for Nanomaterials Technology, Pohang University of Science and Technology (POSTECH))
Cho, Myung-Yeon (Dept. of Electronic Materials Engineering, Kwangwoon University)
Oh, Jong-Min (Dept. of Electronic Materials Engineering, Kwangwoon University)
Koo, Sang-Mo (Dept. of Electronic Materials Engineering, Kwangwoon University)
Lee, Nam-suk (National Institute for Nanomaterials Technology, Pohang University of Science and Technology (POSTECH))
Shin, Hoon-Kyu (National Institute for Nanomaterials Technology, Pohang University of Science and Technology (POSTECH))

Publication Information

Journal of IKEEE / v.22, no.4, 2018 , pp. 1230-1233 More about this Journal

Abstract

$Al_2O_3$ films with the thickness of 50 nm were fabricated on 4H-SiC by aerosol deposition, and their electrical properties were characterized with different post annealing conditions. As a result, the $Al_2O_3$ film annealed in $N_2$ atmosphere showed decreased fixed charge density at the interface area between the $Al_2O_3$ and SiC, and increased leakage currents due to the generation of oxygen vacancies. From this result, it was confirmed that proper $N_2$ and $O_2$ ratio for the post annealing process is important.

Keywords

4H-SiC; Gate Oxide; Aerosol Deposition; $Al_2O_3$ ; Post Annealing;

Citations & Related Records

Reference

1	V. V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K. Y. Cheong, and S. Dimitrijev, "Mechanisms Responsible for Improvement of $4H-SiC/SiO_2$ Interface Properties by Nitridation," Appl. Phys. Lett., vol.82, no.4, pp.568-570, 2003. DOI:10.1063/1.1532103 DOI
2	J. AKedo, "Room Temperature Impact Consolidation (RTIC) of Fine Ceramic Powder by Aerosol Deposition Method and Applications to Microdevices," J. Thermal Spray Tech., vol.17, no.2, pp.181-198, 2008. DOI:10.1007/s11666-008-9163-7 DOI
3	Z. Yao, C. Wang, Y. Li, H. K. Kim, and N. Y. Kim, "Effect of Starting Powder and Thermal Treatment on the Aerosol Deposited $BaTiO_3$ Thin Films toward less Leakage Currents," Nanoscale Res. Lett., vol.9, no.1, pp.435, 2014. DOI:10.1186/1556-276X-9-435 DOI
4	M. Usman, M. Arshad, S. S. Suvanam, and A. Hallen, "Influence of Annealing Enviorment on the $ALD-Al_2O_3/4H-SiC$ Interface Studied through XPS," J. Phys. D:Appl. Phys., vol.51, pp.105111, 2018. DOI:10.1088/1361-6463/aaa9a1 DOI

KSCI

Electrical Properties of Al2O3 Gate Oxide on 4H-SiC with Post Annealing Fabricated by Aerosol Deposition 에어로졸 데포지션으로 제조된 4H-SiC 위 Al2O3 게이트 산화막의 후열처리 공정에 따른 전기적 특성

Electrical Properties of Al₂O₃ Gate Oxide on 4H-SiC with Post Annealing Fabricated by Aerosol Deposition