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http://dx.doi.org/10.7471/ikeee.2018.22.3.706

Study on Characteristics of 4H-SiC MOS Device with PECVD SiON Insulator  

Kim, Hyun-Seop (School of Electronic and Electrical Engineering, Hongik University)
Lee, Jae-Gil (Dept. of Electrical and Computer Engineering, Seoul National University)
Lim, Jongtae (School of Electronic and Electrical Engineering, Hongik University)
Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University)
Publication Information
Journal of IKEEE / v.22, no.3, 2018 , pp. 706-711 More about this Journal
Abstract
In this work, we have investigated the characteristics of 4H-SiC metal-oxide-semiconductor (MOS) devices with silicon oxynitride (SiON) insulator using plasma enhanced chemical vapor deposition (PECVD). After post metallization annealing, the trap densities of the fabricated devices decreased significantly. In particular, the device annealed at $500^{\circ}C$ in forming gas ambient exhibited excellent MOS characteristics along with negligible hysteresis, which proved the potential of PECVD SiON as an alternative gate insulator for use in 4H-SiC MOS device.
Keywords
4H-SiC; post metallization annealing; MOS; effective border trap; silicon oxynitride;
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1 T. Kimoto, "Material Science and Device Physics in SiC Technology for High-Voltage Power Devices," Jpn. J. Appl. Phys., vol.54, no.4, p.040103, 2015. DOI:10.7567/JJAP.54.040103   DOI
2 J. A. Cooper and A. Agarwal, "SiC Power-Switching Device-The Second Electronics Revolution," Proc. IEEE, vol.90, no.6, pp. 956-968, 2002. DOI:10.1109/JPROC.2002.1021561   DOI
3 V. V. Afanasev, M. Basler, G. Pensl, and M. Schulz, "Intrinsic SiC/$SiO_2$ Interface States," Phys. Stat. Sol. (a), vol.162, no.1, pp. 321-337, 1997. DOI:10.1002/1521-396X   DOI
4 L. A. Lipkin and J. W. Palmour, "Improved Oxidation Procedures for Reduced $SiO_2$/SiC Defects," J. Electron. Mater., vol.25, no.5, pp. 909-915, 1996. DOI:10.1007/BF02666657   DOI
5 L. A. Lipkin and J. W. Palmour, "Insulator Investigation on SiC for Improved Reliability," IEEE Trans. Electron Devices, vol.46, no.3, pp. 525-532, 1999. DOI: 10.1109/16.748872   DOI
6 H. R. Lazar, V. Misra, R. S. Johnson, and G. Lucovsky, "Characteristics of Metalorganic Remote Plasma Chemical Vapor Deposited $Al_2O_3$ Gate Stack on SiC Metal-Oxide-Semiconductor Devices," Appl. Phys. Lett., vol.79, no.7, pp. 973-975, 2001. DOI:10.1063/1.1392973   DOI
7 A. Paskaleva, R. R. Ciechonski, M. Syvajarvi, E. Atanassova, and Yakimova, "Electrical Behavior of 4H-SiC Metal-Oxide-Semiconductor Structures with $Al_2O_3$ as Gate Dielectric," J. Appl. Phys., vol.97, no.12, p.124507, 2005. DOI:10.1063/1.1938267   DOI
8 V. V. Afanas'ev, S. A. Campbell, K. Y. Cheong, F. Ciobanu, S. Dimitrijev, G. Pensl, A. Stesmans, and L. Zhong, "Electronic Properties of $SiON/HfO_2$ Insulating Stacks on 4H-SiC (0001)," Mater. Sci. Forum, vol.457-460, pp. 1361-1364, 2004. DOI:10.4028/www.scientific.net/MSF.457-460.1361   DOI
9 J. H. Moon, D. I. Eom, S. Y. No, H. K. Song, J. H. Yim, H. J. Na, J. B. Lee, and H. J. Kim, "Electrical Properties of the $La_2O_3$/4H-SiC Interface Prepared by Atomic Layer Deposition Using $La(iPrCp)_3$ and $H_2O$," Mater. Sci. Forum, vol.527-529, pp. 1083-1086, 2006. DOI:10.4028/www.scientific.net/MSF.527-529.1083   DOI
10 M. L. Green, E. P. Gusev, R. Degraeve, and E. L. Garfunkel, "Ultra-thin (<4 nm) SiO2 and Si-O-N Gate Dielectric Layers for Silicon Microelectronics: Understanding the Processing, Structure, and Physical and Electrical Limits," J. Appl. Phys., vol.90, no.5, pp. 2057-2121, 2001. DOI:10.1063/1.1385803   DOI
11 K. Chatty, V. Khemka, T. P. Chow, and R. J. Gutmann, "Re-Oxidation Characteristics of Oxynitrides on 3C- and 4H-SiC," Jour. Elec. Mater., vol.28, no.3, pp. 161-166, 1999. DOI:10.1007/s11664-999-0007-0   DOI
12 S. Chakraborty, P. T. Lai, and P. C. K. Kwok, "MOS Characteristics of NO-Grown Oxynitrides on N-Type 6H-SiC," Microelectronics Reliability, vol.42, no.3, pp. 455-458, 2002. DOI:10.1016/S0026-2714(01)00220-7   DOI
13 H.-S. Kim, S.-W. Han, W.-H. Jang, C.-H. Cho, K.-S. Seo, J. Oh, and H.-Y. Cha, "Normally-off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric," IEEE Electron Device Lett., vol.38, no.8, pp. 1090-1093, 2017. DOI:10.1109/LED.2017.2720719   DOI
14 M. Okamoto, Y. Makifuchi, M. Iijima, Y. Sakai, N. Iwamuro, H. Kimura, K. Fukuda, and H. Okumura, "Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal-Oxide-Semiconductor Field-Effect Transistors," Appl. Phys. Express, vol.5, no.4, p.041302, 2012. DOI:10.1143/APEX.5.041302   DOI
15 R. Singh, "Reliability and Performance Limitations in SiC Power Devices," Microelectronics Reliability, vol.46, no.5-6, pp. 713-730, 2006. DOI:10.1016/j.microrel.2005.10.013   DOI
16 E. K. Evangelou, M. S. Rahman, and A. Dimoulas, "Correlation of Charge Buildup and Stress-Induced Leakage Current in Cerium Oxide Films Grown on Ge (100) Substrates," IEEE Trans. Electron Devices, vol.56, no.3, pp. 399-407, 2009. DOI:10.1109/TED.2008.2011935   DOI
17 D. M. Fleetwood and N. S. Saks, "Oxide, Interface, and Border Traps in Thermal, $N_2O$, and $N_2O$-Nitrided Oxides," J. Appl. Phys., vol.79, no.3, pp. 1583-1594, 1996. DOI:10.1063/1.361002   DOI