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http://dx.doi.org/10.7471/ikeee.2018.22.2.488

The hysteresis characteristic of Feedback field-effect transistors with fluctuation of gate oxide and metal gate  

Lee, Kyungsoo (Dept. of Electrical Engineering, Korea University)
Woo, Sola (Dept. of Electrical Engineering, Korea University)
Cho, Jinsun (Dept. of Electrical Engineering, Korea University)
Kang, Hyungu (Dept. of Electrical Engineering, Korea University)
Kim, Sangsig (Dept. of Electrical Engineering, Korea University)
Publication Information
Journal of IKEEE / v.22, no.2, 2018 , pp. 488-490 More about this Journal
Abstract
In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characterisitcs, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. To demonstrate the changing characteristics of hysteresis, one of the important features of the feedback field effect transistor, we simulated changing the gate insulating material and the gate metal electrode. The fluctuation in the characteristics changed the $V_{TH}$ of the hysteresis and showed a decrease in width of the hysteresis.
Keywords
Feedback field-effect transistors; feedback mechanism; hysteresis; memory application; high-k; work function;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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