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http://dx.doi.org/10.7471/ikeee.2018.22.2.427

Ga2O3 Epi Growth by HVPE for Application of Power Semiconductors  

Kang, Ey Goo (Dept. of Energy IT Engineering, Far East University)
Publication Information
Journal of IKEEE / v.22, no.2, 2018 , pp. 427-431 More about this Journal
Abstract
This research was worked about $Ga_2O_3$ Epi wafer that was one of the mose wide band gap semiconductors to be used power semiconductor industry. This wafer was grown $5.3{\mu}m$ thickness on Sn doped $Ga_2O_3$ Substrate by HVPE(Hydride Vapor Phase Epitaxy). Generally, we can fabricate 600V class power semiconductor devices when the thickness of compoound power semiconductor is $5{\mu}m$. but in case of $Ga_2O_3$ Epi wafer, we can obtain over 1000V class. As a result of J-V measurment of the grown $Ga_2O_3$ Epi wafer, we obtain $2.9-7.7m{\Omega}{\cdot}cm^2$ on resistance. Specially, in case of reverse, we comfirmed a little leakage current when the reverse voltage is over 200V.
Keywords
$Ga_2O_3$ Substrate; $Ga_2O_3$ Epi wafer; Power devices; Wide Band Gap; On resistance;
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