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T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki, "Valence band ordering in studied by polarized transmittance and reflectance spectroscopy," Jpn. J. Appl. Phys., vol. 54, no. 11, p. 112601, 2015.DOI:10.7567/JJAP.54.112601
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K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, "Ga2O3 Schottky barrier diodes fabricated by using single-crystal (010) substrates," IEEE Electron Device Lett., vol. 34, no. 4, pp. 493-495, 2013. DOI:10.1109/LED.2013.2244057
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M. Higashiwaki, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, and S. Yamakoshi, "Ga2O3 Schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE," in Proc. 73rd IEEE Device Res. Conf., pp. 29-30, 2015. DOI:10.1109/DRC.2015.7175536
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M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, "Depletion-mode Ga2O3 MOS field-effect transistors on (010) substrates and temperature dependence of their device characteristics," Appl. P hys. Lett., vol. 103, no. 12, p. 123511, 2013. DOI:10.1063/1.4821858
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M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, "Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal (010) substrates," Appl. Phys. Lett., vol. 100, no. 1, p. 013504, 2012. DOI:10.1063/1.3674287
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K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, "Si-ion implantation doping in and its application to fabrication of low-resistance ohmic contacts," Appl. Phys. Exp., vol. 6, no. 8, p. 086502, 2013.DOI:10.7567/APEX.6.086502
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