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http://dx.doi.org/10.7471/ikeee.2018.22.2.344

Electrical Characteristics of AlGaN/GaN HEMT at Low Temperature  

Kang, Min Sung (School of Semiconductor Science and Technology, and Chemical Engineering/ Semiconductor Physics Research Center, Chonbuk National University)
Park, Yong Woon (School of Semiconductor Science and Technology, and Chemical Engineering/ Semiconductor Physics Research Center, Chonbuk National University)
Choi, Cheol-Jong (School of Semiconductor Science and Technology, and Chemical Engineering/ Semiconductor Physics Research Center, Chonbuk National University)
Yang, Jeon Wook (School of Semiconductor Science and Technology, and Chemical Engineering/ Semiconductor Physics Research Center, Chonbuk National University)
Publication Information
Journal of IKEEE / v.22, no.2, 2018 , pp. 344-349 More about this Journal
Abstract
Low temperature variation of electrical characteristics for AlGaN/GaN/HEMT was studied. To investigate the effect of temperatures, transistor was cool down to $-178^{\circ}C$ and electrical characteristics were measured. The drain current density of an AlGaN/GaN HEMT with a gate length of $2{\mu}m$ was increased from 264 mA/mm to 388 mA/mm and the maximum transconductance was increased from 105 mS/mm to 134 mS/mm by decreasing the temperature to $-108^{\circ}C$. Also, the threshold voltage was shifted -0.39 V with the temperature. The reason for the variations was seemed to the reduced channel resistance corresponding to the temperature. However, most of the variation of the electrical characteristics takes places above $-108^{\circ}C$.
Keywords
AlGaN/GAN; HEMT; Low Temperature; Gate Diode; Characteristics;
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