Browse > Article
http://dx.doi.org/10.7471/ikeee.2018.22.2.339

Study on improvement of on-state voltage drop characteristics According to Variation of JFET region of IGBT structure  

Ahn, Byoung-Sup (Dept. of Energy Semiconductor Engineering, Graduate School of Far East University)
Kang, Ey-Goo (Dept. of Energy IT Engineering, Far East University)
Publication Information
Journal of IKEEE / v.22, no.2, 2018 , pp. 339-343 More about this Journal
Abstract
Power semiconductors are semiconductors capable of controlling power over 1W and are mainly used as switches. This power semiconductor device has been developed with the goal of reducing power consumption and high breakdown voltage. This research was analyzed electrical characteristics of IGBT(Insulated Gate Biopolar Transistor) according to diffusion length of JFET region. The Diffusion length of JFET region was controlled by temperature and time using T-CAD simulator. As a result of experiments, we could obtain 1.14V low on state voltage drop by fixing 1440V breakdown voltage.
Keywords
Power Device; IGBT; Breakdown Voltage; On state Voltage Drop; Junction FET; Drive in;
Citations & Related Records
연도 인용수 순위
  • Reference
1 G. Majundar, T. Minato, "Recent and future IGBT evolution," Power Conversion Conference proceedings, pp. 355-359, 2007 DOI: 10.1109/PCCON.2007.372992
2 Y. Shaorming, G. Sheu, G. Jiaming, T. J. Ruey, " Application of multi-lateral double diffused field ring in ultrahigh-voltage device MOS transistor region," IEEE 10th International Conferenceon Electronics & Measurement, Vol.1, pp.85-88, 2011 DOI: 10.1109/ICEMI.2011.6037685
3 B. Q. Tang, Y. M. Gao, J. S. Luo "The quasi-threedimensional optimum analysis of breakdown voltage of floating field-limiting rings," Solid-Stage Electronics, Vol. 41, No. 11, pp. 1821-1824, 1997. DOI:https://doi.org/10.1016/S0038-1101(97)00151-2   DOI
4 C. H. Yu, Y. Wang, J. Liu, L. L. Sun, " Research of Single-Event Burnout in Floating Field Ring Termination of Power MOSFETs," IEEE Tran. On Electron Devices, Vol. 64, pp. 2906-2911, 2017   DOI
5 P. Mirone, L. Maresca, M. Riccion, G. D. Falco, G. Romano, A. Irace, G. Breglio, " A Comprehensive study of current conduction during breakdown of Floating Field Ring terminations at arbitrary current levels," The Proceeding PCIM Europe 2015, pp. 1-8, 2015