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http://dx.doi.org/10.7471/ikeee.2018.22.1.74

Analysis of Center Potential and Subthreshold Swing in Junctionless Cylindrical Surrounding Gate and Doube Gate MOSFET  

Jung, Hakkee (Dept. of Electronic Engineering, Kunsan National University)
Publication Information
Journal of IKEEE / v.22, no.1, 2018 , pp. 74-79 More about this Journal
Abstract
We analyzed the relationship between center potential and subthreshold swing (SS) of Junctionless Cylindrical Surrounding Gate (JLCSG) and Junctionless Double Gate (JLDG) MOSFET. The SS was obtained using the analytical potential distribution and the center potential, and SSs were compared and investigated according to the change of channel dimension. As a result, we observed that the change in central potential distribution directly affects the SS. As the channel thickness and oxide thickness increased, the SS increased more sensitively in JLDG. Therefore, it was found that JLCSG structure is more effective to reduce the short channel effect of the nano MOSFET.
Keywords
junctionless; cylindrical surrounding; double gate; subthreshold swing; center potential;
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