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http://dx.doi.org/10.7471/ikeee.2018.22.1.209

Investigation of GaN Negative Capacitance Field-Effect Transistor Using P(VDF-TrFE) Organic/Ferroelectric Material  

Han, Sang-Woo (School of Electronic and Electrical Engineering, Hongik University)
Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University)
Publication Information
Journal of IKEEE / v.22, no.1, 2018 , pp. 209-212 More about this Journal
Abstract
In this work, we developed P(VDF-TrFE) organic/ferroelectric material based metal-ferroelectric-metal (MFM) capacitors in order to improve the switching characteristics of gallium nitride (GaN) heterojunction field-effect transistors (HFET). The 27 nm-thick P(VDF-TrFE) MFM capacitors exhibited about 60 ~ 96 pF capacitance with a polarization density of $6{\mu}C/cm^2$ at 4 MV/cm. When the MFM capacitor was connected in series with the gate electrode of GaN HFET, the subthreshold slope decreased from 104 to 82 mV/dec.
Keywords
Negative capacitance; NCFET; Ferroelectric; GaN; Gallium Nitride;
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