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http://dx.doi.org/10.7471/ikeee.2018.22.1.205

Reliability Assessment of Normally-off p-AlGaN-gate GaN HEMTs with Gate-bias Stress  

Keum, Dongmin (Dept. of Electronics and Electrical Engineering, Hongik University)
Kim, Hyungtak (Dept. of Electronics and Electrical Engineering, Hongik University)
Publication Information
Journal of IKEEE / v.22, no.1, 2018 , pp. 205-208 More about this Journal
Abstract
In this work, we performed reverse- and forward-gate bias stress tests on normally-off AlGaN/GaN high electron mobility transistors(HEMTs) with p-AlGaN-gate for reliability assessment. Inverse piezoelectric effect, commonly observed in Schottky-gate AlGaN/GaN HEMTs during reverse bias stress, was not observed in p-AlGaN-gate AlGaN/GaN HEMTs. Forward gate bias stress tests revealed distinct degradation of p-AlGaN-gate devices exhibiting sudden increase of gate leakage current. We suggest that forward gate bias stress tests should be performed to define the failure criteria and assess the reliability of normally off p-AlGaN-gate GaN HEMTs.
Keywords
Gallium nitride(GaN); Normally-off; p-AlGaN-gate; Reliability; Stress tests; HEMTs;
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