Browse > Article
http://dx.doi.org/10.7471/ikeee.2017.21.2.170

Effect of gate electrode material on electrical characteristics of a-IGZO thin-film transistors  

Oh, Hyungon (Dept of Electrical Engineering, Korea University)
Cho, Kyoungah (Dept of Electrical Engineering, Korea University)
Kim, Sangsig (Dept of Electrical Engineering, Korea University)
Publication Information
Journal of IKEEE / v.21, no.2, 2017 , pp. 170-173 More about this Journal
Abstract
In this study, we fabricate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with three different gate electrode materials of Al, Mo and Pt on plastic substrates and investigate their electrical characteristics. Compared to an a-IGZO TFT with Al gate electrode, the threshold voltage of an a-IGZO TFT with a Pt electrode decreases from -4.2 to -0.3 V. and the filed-effect mobility is improved from 15.8 to $22.1cm^2/V{\cdot}s$. The threshold voltage shift of the TFT is affected by the difference between the work function of the gate electrode and the Fermi energy of the channel layer. Moreover, the Pt gate electrode is considered to be the suitable material in terms of the electrical characteristics of the TFT. In addition, an description on an a-IGZO TFT with a Mo electrode will be given here.
Keywords
a-IGZO; TFT; gate electrode material; work function; threshold voltage;
Citations & Related Records
연도 인용수 순위
  • Reference
1 J. C. Park, H. N. Lee, S. Im, "Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor," ACS. Appl. Mater. Interfaces 5, 6990, 2013. DOI:10.1063/1.2966145   DOI
2 J. S. Lee, S. Chang, S. M. Koo, S. Y. Lee, "High-Performance a-IGZO TFT With ZrO2 Gate Dielectric Fabricated at Room Temperature," IEEE Electron Device Lett. 31, 3, 2010. DOI:10.1109/LED.2009.2038806
3 J. Y. Bak, S. M. Yoon, S. Yang, G. H. Kim, S. K. Park, C.Sun H, "Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors," J . Vac. Sci. Technol. B 30, 4, 2012. DOI:10.1116/1.4731257
4 S. H. Rha, J. Jung, Y. Jung, Y. J. Chung, U. K. Kim, E. S. Hwang, B. K. Park, T. J. Park, J. H. Choi, C. S. Hwang, "Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs," IEEE Electron Device Lett. 59, 12, 2012. DOI:10.1109/TED.2012.2220367
5 J. Jeong, G. J. Lee, J. Kim, B. Choi, "Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes," Appl. Phys. Lett 100, 112109 2012.   DOI
6 J. Jeong, G. J. Lee, J. Kim, B. Choi, "Scaling behaviour of a-IGZO TFTs with transparent a-IZO source/drain electrodes," J . Phys. D: Appl. Phys. 45, 135103 2012.   DOI
7 Y. C. Yeo, T. J. King, C. Hu, "Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology," J . Appl. Phys. 92, 12 2002. DOI:10.1063/1.1521517