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http://dx.doi.org/10.7471/ikeee.2017.21.1.96

Effect of Random Dopant Fluctuation Depending on the Ion Implantation for the Metal-Oxide-Semiconductor Field Effect Transistor  

Park, Jae Hyun (Dept. of Semiconductor Systems Engineering, Korea University)
Chang, Tae-sig (Dept. of Semiconductor Systems Engineering, Korea University)
Kim, Minsuk (Dept. of Electrical Engineering, Korea University)
Woo, Sola (Dept. of Electrical Engineering, Korea University)
Kim, Sangsig (Dept. of Electrical Engineering, Korea University)
Publication Information
Journal of IKEEE / v.21, no.1, 2017 , pp. 96-99 More about this Journal
Abstract
In this study the influence of the random dopant fluctuation (RDF) depending on the halo and LDD implantations for the metal-oxide-semiconductor field effect transistor is investigated through the 3D atomistic device simulation. For accuracy in calculation, the kinetic monte carlo method that models individual impurity atoms and defects in the device was applied to the atomistic simulation. It is found that halo implantation has the greater influence on RDF effects than LDD implantation; three-standard deviation of $V_{TH}$ and $I_{ON}$ induced by halo implantation is about 6.45 times and 2.46 times those of LDD implantation. The distributions of $V_{TH}$ and $I_{ON}$ are also displayed in the histograms with normal distribution curves.
Keywords
Random dopant fluctuation; dynamic random access memory; implantation; simulation; MOSFET;
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